Microsemi Corporation 1PMT5915/TR7
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 1PMT5915/TR7
- Microsemi Corporation
- DIODE ZENER 3.9V 3W DO216AA
- Diodes - Zener - Single
- 1PMT5915/TR7 Лист данных
- DO-216AA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 28185
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 1PMT5915/TR7 |
| Category Diodes - Zener - Single |
| Manufacturer Microsemi Corporation |
| Description DIODE ZENER 3.9V 3W DO216AA |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C |
| Mounting Type Surface Mount |
| Package / Case DO-216AA |
| Supplier Device Package DO-216AA |
| Tolerance ±20% |
| Power - Max 3 W |
| Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
| Current - Reverse Leakage @ Vr 25 µA @ 1 V |
| Voltage - Zener (Nom) (Vz) 3.9 V |
| Impedance (Max) (Zzt) 7.5 Ohms |
| Package_case DO-216AA |
1PMT5915/TR7 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1PMT5915/TR7 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
1PMT5915/TR7 сопутствующие товары
Комментарии
Microsemi Corporation
1PMT5914CE3/TR7
DIODE ZENER 3.6V 3W DO216AA
1PMT5914C/TR7
DIODE ZENER 3.6V 3W DO216AA
1PMT5914BE3/TR7
DIODE ZENER 3.6V 3W DO216AA
1PMT5914B/TR7
DIODE ZENER 3.6V 3W DO216AA
1PMT5914AE3/TR7
DIODE ZENER 3.6V 3W DO216AA
1PMT5914A/TR7
DIODE ZENER 3.6V 3W DO216AA
1PMT5914/TR7
DIODE ZENER 3.6V 3W DO216AA
1N5956PE3/TR8
DIODE ZENER 3.6V 3W DO216AA
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
