Microsemi Corporation 1PMT4624E3/TR7
- 1PMT4624E3/TR7
- Microsemi Corporation
- DIODE ZENER 4.7V 1W DO216
- Diodes - Zener - Single
- 1PMT4624E3/TR7 Лист данных
- DO-216AA
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 11253
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1PMT4624E3/TR7 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 4.7V 1W DO216 |
Package Tape & Reel (TR) |
Series POWERMITE® |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case DO-216AA |
Supplier Device Package DO-216 |
Tolerance ±5% |
Power - Max 1 W |
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 200 mA |
Current - Reverse Leakage @ Vr 10 µA @ 3 V |
Voltage - Zener (Nom) (Vz) 4.7 V |
Impedance (Max) (Zzt) 1.6 kOhms |
Package_case DO-216AA |
1PMT4624E3/TR7 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1PMT4624E3/TR7 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
1PMT4624CE3/TR7
DIODE ZENER 4.7V 1W DO216
1PMT4624CE3/TR13
DIODE ZENER 4.7V 1W DO216
1PMT4624C/TR7
DIODE ZENER 4.7V 1W DO216
1PMT4624C/TR13
DIODE ZENER 4.7V 1W DO216
JANTXV1N4614 (DO35)
DIODE ZENER 4.7V 1W DO216
JANTX1N4614 (DO35)
DIODE ZENER 4.7V 1W DO216
1N973B
DIODE ZENER 4.7V 1W DO216
1N972B
DIODE ZENER 4.7V 1W DO216
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.