Taiwan Semiconductor Corporation 1PGSMC5368 R6G
- 1PGSMC5368 R6G
- Taiwan Semiconductor Corporation
- DIODE ZENER 5W DO214AB
- Diodes - Zener - Single
- 1PGSMC5368 R6G Лист данных
- DO-214AB, SMC
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2574
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1PGSMC5368 R6G |
Category Diodes - Zener - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description DIODE ZENER 5W DO214AB |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case DO-214AB, SMC |
Supplier Device Package DO-214AB (SMC) |
Tolerance ±5% |
Power - Max 5 W |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 500 nA @ 35.8 V |
Voltage - Zener (Nom) (Vz) 47 V |
Impedance (Max) (Zzt) 25 Ohms |
Package_case DO-214AB, SMC |
1PGSMC5368 R6G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1PGSMC5368 R6G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Taiwan Semiconductor Corporation
1PGSMC5358 V7G
DIODE ZENER 5W DO214AB
1PGSMC5353 V7G
DIODE ZENER 5W DO214AB
1PGSMC5363 V7G
DIODE ZENER 5W DO214AB
1PGSMC5369 V7G
DIODE ZENER 5W DO214AB
1PGSMC5362 V7G
DIODE ZENER 5W DO214AB
1PGSMC5348 V7G
DIODE ZENER 5W DO214AB
1PGSMC5366 V7G
DIODE ZENER 5W DO214AB
1PGSMC5357 V7G
DIODE ZENER 5W DO214AB
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic