Taiwan Semiconductor Corporation 1PGSMC5348 R7G
- 1PGSMC5348 R7G
- Taiwan Semiconductor Corporation
- DIODE ZENER 11V 5W DO214AB
- Diodes - Zener - Single
- 1PGSMC5348 R7G Лист данных
- DO-214AB, SMC
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 11720
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1PGSMC5348 R7G |
Category Diodes - Zener - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description DIODE ZENER 11V 5W DO214AB |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case DO-214AB, SMC |
Supplier Device Package DO-214AB (SMC) |
Tolerance ±5% |
Power - Max 5 W |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 5 µA @ 8.4 V |
Voltage - Zener (Nom) (Vz) 11 V |
Impedance (Max) (Zzt) 3 Ohms |
Package_case DO-214AB, SMC |
1PGSMC5348 R7G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1PGSMC5348 R7G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Taiwan Semiconductor Corporation
1PGSMC5349HR7G
DIODE ZENER 12V 5W DO214AB
1PGSMC5353 R7G
DIODE ZENER 12V 5W DO214AB
1PGSMC5353HR7G
DIODE ZENER 12V 5W DO214AB
1PGSMC5358 R7G
DIODE ZENER 12V 5W DO214AB
1PGSMC5358HR7G
DIODE ZENER 12V 5W DO214AB
1SMC5352 V7G
DIODE ZENER 12V 5W DO214AB
1SMC5352 V7G
DIODE ZENER 12V 5W DO214AB
1PGSMA110Z R3G
DIODE ZENER 12V 5W DO214AB
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.