Microsemi Corporation 1N5375E3/TR12
- 1N5375E3/TR12
- Microsemi Corporation
- DIODE ZENER 82V 5W T18
- Diodes - Zener - Single
- 1N5375E3/TR12 Лист данных
- T-18, Axial
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 23148
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1N5375E3/TR12 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 82V 5W T18 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -65°C ~ 150°C |
Mounting Type Through Hole |
Package / Case T-18, Axial |
Supplier Device Package T-18 |
Tolerance ±20% |
Power - Max 5 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A |
Current - Reverse Leakage @ Vr 500 nA @ 59 V |
Voltage - Zener (Nom) (Vz) 82 V |
Impedance (Max) (Zzt) 64 Ohms |
Package_case T-18, Axial |
1N5375E3/TR12 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1N5375E3/TR12 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
1N5375C/TR12
DIODE ZENER 82V 5W T18
1N5383CE3/TR13
DIODE ZENER 82V 5W T18
1N5383CE3/TR12
DIODE ZENER 82V 5W T18
1N5383C/TR12
DIODE ZENER 82V 5W T18
1N5383BE3/TR13
DIODE ZENER 82V 5W T18
1N5383BE3/TR12
DIODE ZENER 82V 5W T18
1N5383B/TR12
DIODE ZENER 82V 5W T18
1N5383AE3/TR13
DIODE ZENER 82V 5W T18
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.