1N5226C-TAP

Vishay Semiconductor - Diodes Division 1N5226C-TAP

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 1N5226C-TAP
  • Vishay Semiconductor - Diodes Division
  • DIODE ZENER 3.3V 500MW DO35
  • Diodes - Zener - Single
  • 1N5226C-TAP Лист данных
  • DO-204AH, DO-35, Axial
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/1N5226C-TAPLead free / RoHS Compliant
  • 1941
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
1N5226C-TAP
Category
Diodes - Zener - Single
Manufacturer
Vishay Semiconductor - Diodes Division
Description
DIODE ZENER 3.3V 500MW DO35
Package
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Operating Temperature
175°C
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Supplier Device Package
DO-35 (DO-204AH)
Tolerance
±2%
Power - Max
500 mW
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 200 mA
Current - Reverse Leakage @ Vr
25 µA @ 1 V
Voltage - Zener (Nom) (Vz)
3.3 V
Impedance (Max) (Zzt)
28 Ohms
Package_case
DO-204AH, DO-35, Axial

1N5226C-TAP Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/1N5226C-TAP

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/1N5226C-TAP

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/1N5226C-TAP

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 1N5226C-TAP ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division,https://www.jinftry.ru/product_detail/1N5226C-TAP
1N5224C-TAP,https://www.jinftry.ru/product_detail/1N5226C-TAP
1N5224C-TAP

DIODE ZENER 2.8V 500MW DO35

BZX384C24-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C24-HE3-18

DIODE ZENER 2.8V 500MW DO35

BZX384C22-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C22-HE3-18

DIODE ZENER 2.8V 500MW DO35

BZX384C20-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C20-HE3-18

DIODE ZENER 2.8V 500MW DO35

BZX384C18-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C18-HE3-18

DIODE ZENER 2.8V 500MW DO35

BZX384C16-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C16-HE3-18

DIODE ZENER 2.8V 500MW DO35

BZX384C15-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C15-HE3-18

DIODE ZENER 2.8V 500MW DO35

BZX384C13-HE3-18,https://www.jinftry.ru/product_detail/1N5226C-TAP
BZX384C13-HE3-18

DIODE ZENER 2.8V 500MW DO35

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP