Rectron USA 1N4003-T
- 1N4003-T
- Rectron USA
- DIODE GEN PURP 200V 1A DO-41
- Diodes - Rectifiers - Single
- 1N4003-T Лист данных
- DO-204AL, DO-41, Axial
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 22063
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1N4003-T |
Category Diodes - Rectifiers - Single |
Manufacturer Rectron USA |
Description DIODE GEN PURP 200V 1A DO-41 |
Package Tape & Reel (TR) |
Series - |
Mounting Type Through Hole |
Package / Case DO-204AL, DO-41, Axial |
Supplier Device Package DO-41 |
Diode Type Standard |
Current - Average Rectified (Io) 1A |
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A |
Current - Reverse Leakage @ Vr 200 nA @ 1000 V |
Capacitance @ Vr, F 15pF @ 4V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 1000 V |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -55°C ~ 150°C |
Package_case DO-204AL, DO-41, Axial |
1N4003-T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1N4003-T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rectron USA
1N4007G-T
DIODE GEN PURP GLASS 1000V 1A
1N5404G
DIODE GEN PURP GLASS 1000V 1A
1N5406G
DIODE GEN PURP GLASS 1000V 1A
1N5402G
DIODE GEN PURP GLASS 1000V 1A
1N5400G
DIODE GEN PURP GLASS 1000V 1A
1N5408G
DIODE GEN PURP GLASS 1000V 1A
6A8
DIODE GEN PURP GLASS 1000V 1A
6A6
DIODE GEN PURP GLASS 1000V 1A
What is a bipolar transistor and what is its operating mode
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic